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1. product pro?le 1.1 general description ip4085cx4, ip4385cx4, ip4386cx4 and IP4387CX4 are designed to protect appliances from destruction by either: ? electrostatic discharges (esd) of 30 kv, far exceeding iec 61000-4-2 standard, level 4 ? overvoltage ? wrong polarity each device has a single high-performance esd-protection diode with the anode and cathode each connected to two solder balls. the ip4085cx4, ip4385cx4, ip4386cx4 and IP4387CX4 are fabricated using monolithic silicon technology in a wafer-level chip-scale package (wlcsp) with a pitch of 0.4 mm (ip438xcx4) or 0.5 mm (ip4085cx4). 1.2 features n pb-free, rohs and dark green compliant n single integrated high-performance esd-protection diode n surge immunity according to iec 61000-4-5 (8/20 m s) up to 60 a (ip4085cx4) n esd protection of >30 kv contact discharge, far exceeding iec 61000-4-2 standard, level 4 n small 2 2 solder ball wlcsp package with 0.4 mm or 0.5 mm pitch 1.3 applications n general purpose esd-protection such as for charger interfaces in: u cellular and pcs mobile handsets u cordless telephones u wireless data (wan/lan) systems ip4085cx4; ip4385cx4; ip4386cx4; IP4387CX4 integrated high-performance esd-protection diodes to iec61000-4-2, level 4 rev. 01 26 march 2009 product data sheet
ip4085_4385_4386_4387_cx4_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 26 march 2009 2 of 16 nxp semiconductors ip4085/4385/4386/4387/cx4 integrated high-performance esd-protection diodes 2. pinning information 3. ordering information 4. functional diagram fig 1. pin con?guration ip4085cx4; ip4385cx4; ip4386cx4; IP4387CX4 table 1. pinning pin description a1 and a2 diode cathode b1 and b2 diode anode 001aaj238 ip4085cx4 ip438xcx4 transparent top view b a 2 1 ball a1 index area table 2. ordering information type number package name description version ip4085cx4/lf wlcsp4 wafer level chip-size package: 4 bumps; 0.91 0.91 0.65 mm ip4085cx4/lf ip4385cx4/lf wlcsp4 wafer level chip-size package: 4 bumps; 0.76 0.76 0.61 mm ip438xcx4/lf ip4386cx4/lf wlcsp4 wafer level chip-size package: 4 bumps; 0.76 0.76 0.61 mm ip438xcx4/lf IP4387CX4/lf wlcsp4 wafer level chip-size package: 4 bumps; 0.76 0.76 0.61 mm ip438xcx4/lf fig 2. schematic diagram ip4085cx4; ip4385cx4; ip4386cx4; IP4387CX4 001aaj239 a1 b1 a2 b2
ip4085_4385_4386_4387_cx4_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 26 march 2009 3 of 16 nxp semiconductors ip4085/4385/4386/4387/cx4 integrated high-performance esd-protection diodes 5. limiting values table 3. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v cc supply voltage ip4085cx4/lf; ip4386cx4/lf - 0.5 +14 v ip4385cx4/lf - 0.5 +5.5 v IP4387CX4/lf - 0.5 +8.0 v v esd electrostatic discharge voltage all pins to ground contact discharge [1] - 30 +30 kv air discharge [1] - 15 +15 kv iec 61000-4-2, level 4; all pins to ground contact discharge - 8+8kv air discharge - 15 +15 kv i pp peak pulse current iec 61000-4-5; t p = 8/20 m s ip4085cx4 60 - a ip4385cx4; IP4387CX4 33 - a ip4386cx4 28 - a i fsm non-repetitive peak forward current 10 pulses; 1 pulse per second ip4085cx4; ip4386cx4; t p =2ms 10 - a ip4085cx4; ip4386cx4; t p =5ms 8.5 - a ip4085cx4; ip4386cx4; t p = 100 ms 3.5 - a ip4385cx4; IP4387CX4; t p =2ms 11 - a ip4385cx4; IP4387CX4; t p =5ms 9- a ip4385cx4; IP4387CX4; t p = 100 ms 5- a p tot total power dissipation forward conducting [2] ip4085cx4 [3] -1w ip4385cx4; ip4386cx4; IP4387CX4 [3] - 0.7 w
ip4085_4385_4386_4387_cx4_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 26 march 2009 4 of 16 nxp semiconductors ip4085/4385/4386/4387/cx4 integrated high-performance esd-protection diodes [1] device tested with over 1000 pulses of 30 kv contact discharges, according to the iec 61000-4-2 model. [2] severe self-heating demands a heat-dissipation optimized pcb to prevent the device from de-soldering. for ambient temperatur es above 50 c, the guaranteed life time is 48 hours at 0.7 w, assuming r th to be 130 k/w as speci?ed in t ab le 4 . [3] permanent operation at maximum power dissipation and above maximum junction temperature will result in a reduced life time. 6. thermal characteristics [1] depends on details of layout. 7. characteristics t stg storage temperature - 55 +150 c t re?ow(peak) peak re?ow temperature 10 s maximum - 260 c t amb ambient temperature - 30 +85 c table 3. limiting values continued in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit table 4. thermal characteristics symbol parameter conditions typ unit r th(j-a) thermal resistance from junction to ambient on a 2-layer pcb - ip4085cx4; ip4385cx4; ip4386cx4; IP4387CX4 [1] 130 k/w table 5. electrical characteristics t amb = 25 c; unless otherwise speci?ed. symbol parameter conditions min typ max unit v br breakdown voltage i r = 15 ma ip4085cx4; ip4386cx4 16 - - v ip4385cx4 7.0 - - v IP4387CX4 10 - - v v cl(trt) transient clamping voltage i r = 1 a; t amb 85 c at surge peak pulse according to iec 61000-4-5 ip4085cx4 - - 20.0 v ip4385cx4 - - 10.0 v ip4386cx4 - - 20.0 v IP4387CX4 - - 13.0 v i lr reverse leakage current ip4085cx4; ip4385cx4 v r = +5.0 v - - 200 na ip4386cx4 v r = +14.0 v - - 200 na IP4387CX4 v r = +8.0 v - - 800 na
ip4085_4385_4386_4387_cx4_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 26 march 2009 5 of 16 nxp semiconductors ip4085/4385/4386/4387/cx4 integrated high-performance esd-protection diodes 8. application information 8.1 forward current dc clamping voltage the forward current dc clamping voltage is of interest when protecting circuits from voltage sources with the wrong polarity. figure 3 shows the basic measurement setup. c d diode capacitance dc bias v r = 0 v; f = 1 mhz ip4085cx4 - 180 - pf ip4385cx4 - 450 - pf ip4386cx4 - 160 - pf IP4387CX4 - 290 - pf v fd diode forward voltage i f = 850 ma ip4085cx4 t amb 3 +25 c - - 1.15 v - 30 c t amb +85 c - - 1.3 v ip4385cx4 t amb 3 +25 c - - 1.0 v - 30 c t amb +85 c - - 1.1 v ip4386cx4 t amb 3 +25 c - - 1.15 v - 30 c t amb +85 c - - 1.3 v IP4387CX4 t amb 3 +25 c - - 1.10 v - 30 c t amb +85 c - - 1.25 v table 5. electrical characteristics continued t amb = 25 c; unless otherwise speci?ed. symbol parameter conditions min typ max unit fig 3. measuring dc clamping voltage with forward current v 001aaj240 i f v cl
ip4085_4385_4386_4387_cx4_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 26 march 2009 6 of 16 nxp semiconductors ip4085/4385/4386/4387/cx4 integrated high-performance esd-protection diodes (1) t amb = +25 c. (2) t amb = +85 c. (3) t amb = - 30 c. (1) t amb = +25 c. (2) t amb = +85 c. (3) t amb = - 30 c. fig 4. dc clamping voltage as a function of forward current; ip4085cx4 fig 5. dc clamping voltage as a function of forward current; ip4385cx4 i f (a) 0 1.0 0.8 0.4 0.6 0.2 001aaj241 0.9 0.8 1.0 1.1 v cl (v) 0.7 (1) (2) (3) i f (a) 0 1.0 0.8 0.4 0.6 0.2 001aaj242 0.9 0.8 1.0 1.1 v cl (v) 0.7 (1) (2) (3) (1) t amb = +25 c. (2) t amb = +85 c. (3) t amb = - 30 c. (1) t amb = +25 c. (2) t amb = +85 c. (3) t amb = - 30 c. fig 6. dc clamping voltage as a function of forward current; ip4386cx4 fig 7. dc clamping voltage as a function of forward current; IP4387CX4 i f (a) 0 1.0 0.8 0.4 0.6 0.2 001aaj243 0.9 0.8 1.0 1.1 v cl (v) 0.7 (1) (2) (3) i f (a) 0 1.0 0.8 0.4 0.6 0.2 001aaj244 0.9 0.8 1.0 1.1 v cl (v) 0.7 (1) (2) (3)
ip4085_4385_4386_4387_cx4_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 26 march 2009 7 of 16 nxp semiconductors ip4085/4385/4386/4387/cx4 integrated high-performance esd-protection diodes 8.2 peak clamping voltage the peak clamping voltage for forward and reverse current pulses of 8/20 m s (iec 61000-4-5) is signi?cant when protecting circuits from power surges due to voltage discharges. the current pulse shape over time is shown in figure 9 . the basic measurement setup for forward current and reverse current pulses respectively are shown in figure 8 and figure 14 . fig 8. measuring peak clamping voltage with forward current fig 9. 8/20 m s current pulse waveform according to iec 61000-4-5 v 001aaj245 i pp v cl(m) t ( m s) 040 30 10 20 001aaj558 40 80 120 i pp (%) 0 100 % i pp ; 8 m s e - t 50 % i pp ; 20 m s
ip4085_4385_4386_4387_cx4_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 26 march 2009 8 of 16 nxp semiconductors ip4085/4385/4386/4387/cx4 integrated high-performance esd-protection diodes (1) t amb = +25 c. (2) t amb = +85 c. (3) t amb = - 30 c. (1) t amb = +25 c. (2) t amb = +85 c. (3) t amb = - 30 c. fig 10. peak clamping voltage as a function of forward current; ip4085cx4 fig 11. peak clamping voltage as a function of forward current; ip4385cx4 001aaj247 i f (a) 20 44 36 28 11 13 9 15 17 v cl(m) (v) 7 (1) (3) (2) 001aaj248 i f (a) 20 44 36 28 12 16 20 v cl(m) (v) 8 (3) (1) (2) (1) t amb = +25 c. (2) t amb = +85 c. (3) t amb = - 30 c. (1) t amb = +25 c. (2) t amb = +85 c. (3) t amb = - 30 c. fig 12. peak clamping voltage as a function of forward current; ip4386cx4 fig 13. peak clamping voltage as a function of forward current; IP4387CX4 001aaj249 i f (a) 20 44 36 28 12 16 20 v cl(m) (v) 8 (3) (2) (1) 001aaj250 i f (a) 20 44 36 28 12 16 20 v cl(m) (v) 8 (3) (1) (2)
ip4085_4385_4386_4387_cx4_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 26 march 2009 9 of 16 nxp semiconductors ip4085/4385/4386/4387/cx4 integrated high-performance esd-protection diodes fig 14. measuring peak clamping voltage with reverse current v 001aaj246 i pp v cl(m) (1) t amb = +25 c. (2) t amb = +85 c. (3) t amb = - 30 c. (1) t amb = +25 c. (2) t amb = +85 c. (3) t amb = - 30 c. fig 15. peak clamping voltage as a function of reverse current; ip4085cx4 fig 16. peak clamping voltage as a function of reverse current; ip4385cx4 i r (a) 0.2 0.6 1.0 1.4 1.6 1.2 0.8 0.4 001aaj251 17 18 19 v cl(m) (v) 16 (2) (1) (3) 001aaj252 i r (a) 0.4 1.6 1.2 0.8 7.75 8.25 8.75 8.00 8.50 v cl(m) (v) 7.50 (2) (1) (3)
ip4085_4385_4386_4387_cx4_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 26 march 2009 10 of 16 nxp semiconductors ip4085/4385/4386/4387/cx4 integrated high-performance esd-protection diodes remark: measurements done on a heat-dissipation optimized pcb with massive copper area under the dut. 9. marking (1) t amb = +25 c. (2) t amb = +85 c. (3) t amb = - 30 c. (1) t amb = +25 c. (2) t amb = +85 c. (3) t amb = - 30 c. fig 17. peak clamping voltage as a function of reverse current; ip4386cx4 fig 18. peak clamping voltage as a function of reverse current; IP4387CX4 001aaj253 i r (a) 0.3 1.5 1.1 0.7 17 18 19 v cl(m) (v) 16 (2) (1) (3) 001aaj254 i r (a) 0.4 1.6 1.2 0.8 11.4 11.8 12.2 v cl(m) (v) 11.0 (2) (1) (3) fig 19. marking of ip4085cx4, ip4385cx4, ip4386cx4 and IP4387CX4 001aaj255 transparent top view b a 2 lot/date code information (characters are marked upside down) 1 ball a1 index area
ip4085_4385_4386_4387_cx4_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 26 march 2009 11 of 16 nxp semiconductors ip4085/4385/4386/4387/cx4 integrated high-performance esd-protection diodes 10. package outline fig 20. package outline ip4085cx4/lf (wlcsp4) references outline version european projection issue date iec jedec jeita ip4085cx4/lf ip4085cx4_lf_po 08-12-04 unit mm max nom min 0.70 0.65 0.60 0.26 0.24 0.22 0.96 0.91 0.86 0.96 0.91 0.86 0.5 0.005 a dimensions wlcsp4: wafer level chip-size package; 4 bumps; 0.91 x 0.91 x 0.65 mm ip4085cx4/lf a 1 b 0.37 0.32 0.27 dee v y 0.02 0 0.5 1 mm scale ball a1 index area b a d e c y x detail x a a 1 b e e a c b ? v ball a1 index area 12 a b
ip4085_4385_4386_4387_cx4_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 26 march 2009 12 of 16 nxp semiconductors ip4085/4385/4386/4387/cx4 integrated high-performance esd-protection diodes fig 21. package outline ip438xcx4/lf (wlcsp4) references outline version european projection issue date iec jedec jeita ip438xcx4/lf ip438xcx4_lf_po 08-12-04 unit mm max nom min 0.66 0.61 0.56 0.22 0.20 0.18 0.81 0.76 0.71 0.81 0.76 0.71 0.4 0.005 a dimensions wlcsp4: wafer level chip-size package; 4 bumps; 0.76 x 0.76 x 0.61 mm ip438xcx4/lf a 1 b 0.31 0.26 0.21 dee v y 0.02 0 0.25 0.5 mm scale ball a1 index area b a d e c y x detail x a a 1 b 2 1 a e e a c b ? v ball a1 index area b
ip4085_4385_4386_4387_cx4_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 26 march 2009 13 of 16 nxp semiconductors ip4085/4385/4386/4387/cx4 integrated high-performance esd-protection diodes 11. design and assembly recommendations 11.1 pcb design guidelines for optimum performance it is recommended to use a non-solder mask pcb design (nsmd), also known as a copper-de?ned design, incorporating laser-drilled micro-vias connecting the ground pads to a buried ground-plane layer. this results in the lowest possible ground inductance and provides the best high frequency and esd performance. for this case, refer to t ab le 6 for the recommended pcb design parameters. 11.2 pcb assembly guidelines for pb-free soldering table 6. recommended pcb design parameters parameter value or speci?cation pcb pad diameter 200 m m micro-via diameter 100 m m (0.004 inch) solder mask aperture diameter 370 m m copper thickness 20 m m to 40 m m copper ?nish auni pcb material fr4 table 7. assembly recommendations parameter value or speci?cation solder screen aperture diameter 330 m m solder screen thickness 100 m m (0.004 inch) solder paste: pb-free snag (3 % to 4 %) cu (0.5 % to 0.9 %) solder/?ux ratio 50/50 solder re?ow pro?le see figure 22 the device is capable of withstanding at least three re?ows of this pro?le. fig 22. pb-free solder re?ow pro?le 001aai943 t reflow(peak) 250 230 217 t ( c) cooling rate pre-heat t 1 t 5 t 4 t 3 t 2 t (s)
ip4085_4385_4386_4387_cx4_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 26 march 2009 14 of 16 nxp semiconductors ip4085/4385/4386/4387/cx4 integrated high-performance esd-protection diodes 12. abbreviations 13. revision history table 8. re?ow soldering process characteristics symbol parameter conditions min typ max unit t re?ow(peak) peak re?ow temperature 230 - 260 c t 1 time 1 soak time 60 - 180 s t 2 time 2 time during t 3 250 c--30s t 3 time 3 time during t 3 230 c 10 - 50 s t 4 time 4 time during t > 217 c 30 - 150 s t 5 time 5 - - 540 s dt/dt rate of change of temperature cooling rate - - - 6 c/s pre-heat 2.5 - 4.0 c/s table 9. abbreviations acronym description dut device under test fr4 flame retard 4 lan local area network pcb printed-circuit board pcs personal communication system rohs restriction of hazardous substances wan wide area network wlcsp wafer-level chip-scale package table 10. revision history document id release date data sheet status change notice supersedes ip4085_4385_4386_4387_cx4_1 20090326 product data sheet - -
ip4085_4385_4386_4387_cx4_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 26 march 2009 15 of 16 nxp semiconductors ip4085/4385/4386/4387/cx4 integrated high-performance esd-protection diodes 14. legal information 14.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 14.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 14.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. 14.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 15. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors ip4085/4385/4386/4387/cx4 integrated high-performance esd-protection diodes ? nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 26 march 2009 document identifier: ip4085_4385_4386_4387_cx4_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 16. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 application information. . . . . . . . . . . . . . . . . . . 5 8.1 forward current dc clamping voltage . . . . . . . 5 8.2 peak clamping voltage . . . . . . . . . . . . . . . . . . . 7 9 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 10 package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 11 design and assembly recommendations . . . 13 11.1 pcb design guidelines . . . . . . . . . . . . . . . . . . 13 11.2 pcb assembly guidelines for pb-free soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 12 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 14 13 revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 14 legal information. . . . . . . . . . . . . . . . . . . . . . . 15 14.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 15 14.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 14.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 14.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 15 contact information. . . . . . . . . . . . . . . . . . . . . 15 16 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

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